MMBD352LT1G datasheet, diodes equivalent, ON Semiconductor

Features and benefits

* Very Low Capacitance − Less Than 1.0 pF @ Zero V
* Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
* NSV Prefix for Automotive and Other Applications Requiri.

Application

but are suitable also for use in detector and ultra−fast switching circuits. Features
* Very Low Capacitance − Less .

Description

SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconducto.

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